Main field of study: 011200 Physics
Area of specialization: Physical Optics and Lasers
Department of Optics
Scientific advisor: A.A. Pastor
Reviewer: prof. V.S. Egorov

The interaction of femtosecond laser pulses with a surface of a semiconductor material with quantum dots
А.А. Fedotov

The relaxation dynamics of nonequilibrium charge carriers in gallium arsenide epitaxial films grown by molecularbeam epitaxy at low temperatures has been studied. The growth conditions of the epitaxial layer provided an excess arsenic content of 1.2% in the layer. In a material of this kind, the carrier lifetime is <1 ps. To examine carrier relaxation in the femtosecond range, an original scheme for measuring the refractive index dynamics was developed on the basis of the pump–probe technique. The lifetime of nonequilibrium charge carriers was evaluated to be (200 ± 35) fs.